Physical Principles Involved in Transistor Action, in, The Physical Review, Vol 75, No. 8, April 15, 1949; Second Series. J. Bardeen, W. H. Brattain.

Physical Principles Involved in Transistor Action, in, The Physical Review, Vol 75, No. 8, April 15, 1949; Second Series.

APS, NY April 15, 1949; pp 1115-1338 inclusive, Bardeen and Brattain's article on pp 1208-1225 inclusive; double-column text, diagrams and photographs.

Condition: Very Good overall, large light-blue paper covers of The Physical Review, prev. owner's name lightly across top righthand corner; small closed tear at lower spine paper, loose tear along upper spine paper, spine toned, bump at lower spine end. The binding is secure and square, the pages are clean and unmarked.

Keywords: Physical Principles Involved in Transistor Action, The Physical Review Vol 75 No. 8 April 15, 1949, Bardeen and Brattain, invention of the transistor

Price: $1,500.00

Item Description

'The transistor in the form described herein consists of two point-contact electrodes, called emitter and collector, placed in close proximity on the upper face of a small block of germanium. The base electrode, the third element of the triode, is a loarge area, low resistance contact on the lower face...' (from the Abstract)

'We plan to give here an outline of the history of the development, to give some further data on the characteristics and to discuss the physical principles involved...'.